1 emitter 2 base 3 collector 2SC4173 features high gain bandwidth product: f t =200mhz min. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v collector current i c 500 ma total power dissipation p t 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =40v,i e =0 100 na emitter cutoff current i ebo v eb =4v,i c =0 100 na dc current gain * h fe v ce =1v,i c = 150ma 75 150 300 collector-emitter saturation voltage * v ce(sat) i c =500ma,i b = 50ma 0.25 0.75 v base-emitter saturation voltage * v be(sat) i c =500ma,i b = 50ma 1.0 1.2 v gain bandwidth product f t v ce =10v,i e = -20ma 200 400 mhz output capacitance c ob v cb =10v,i e = 0 , f = 1.0mhz 3.5 8.0 pf turn-on time t on v cc = 30v , 30 ns storage time t stg i c = 150ma , 150 ns turn-off time t off i b1 =-i b2 = 15ma 180 ns *. pw 350s,duty cycle 2% h fe classification marking b12 b13 b14 hfe 75 150 100 200 150 300 smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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